IGBT - IXDN55N120D1 HIGH VOLTAGE IGBT WITE OPTIONAL DIODE

Brand: GERMANY

Group: Semiconductor

Subgroup: IGBT

Model / Brand: IXYS

Stock: Please Call.

قیمت: 3,000,000 Tomman

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Keywords: IXDN55N120D1 ای جی بی تی _ای جی بی تی مینی بلوک _IXYS IXYS IXYS IXYS IXDN IXDN55 IXDN55N IXDN55N120 IXDN55N120 IXDN55N120D1---ای ایکس وای اس المان _ای جی بی تی _IGBT _IGBT _IGBT _IGBT

 

 

Detail:

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 1200V

Collector-emitter saturation voltage |Ucesat|, V:

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 85A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 0

Maximum collector capacity (Cc), pF:

Package: ISOTOP